Effect of threading strain from the interface between P-GaN...

Vacuum 2020 / 02 Vol. 172

Effect of threading strain from the interface between P-GaN and an annealed ITO transparent conducting layer to InGaN/GaN multiple quantum wells

Lin, Yen-Sheng, Li, Ching Ning, Tseng, Chun-Lung, Shen, Ching-Hsing, Mayer, Joachim, Su, Shui-Hsiang
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Volume:
172
Journal:
Vacuum
DOI:
10.1016/j.vacuum.2019.109035
Date:
February, 2020
File:
PDF, 2.33 MB
2020
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