Oxidation kinetics of silicon carbide in steam at...

Oxidation kinetics of silicon carbide in steam at temperature range of 1400 to 1800 °C studied by laser heating

Pham, Hai Vu, Nagae, Yuji, Kurata, Masaki, Bottomley, David, Furumoto, Kenichiro
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Journal:
Journal of Nuclear Materials
DOI:
10.1016/j.jnucmat.2019.151939
Date:
November, 2019
File:
PDF, 3.75 MB
2019
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