Internal electric field and polarization backswitching...

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ACS Applied Electronic Materials 2019 / 11

Internal electric field and polarization backswitching induced by Nb doping in BiFeO3 thin films

Zhou, Yong, Wang, Can, Lou, Xiaojie, Tian, Shilu, Yao, Xiaokang, Ge, Chen, Guo, Er-Jia, He, Meng, Yang, Guozhen, Jin, Kuijuan
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Journal:
ACS Applied Electronic Materials
DOI:
10.1021/acsaelm.9b00737
Date:
November, 2019
File:
PDF, 858 KB
2019
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