Reduction of process temperature for Si surface flattening...

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Japanese Journal of Applied Physics 2019 / 10

Reduction of process temperature for Si surface flattening utilizing Ar/H2 ambient annealing and its application to SOI-MISFETs with bilayer HfN high-k gate insulator

OHMI, Shun-ichiro, Horiuchi, Yusuke, Ishimatsu, Shin, Kudoh, Sohya
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Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/1347-4065/ab5173
Date:
October, 2019
File:
PDF, 516 KB
2019
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