Effects of dual spacer on electrical characteristics and random telegraph noise of gate-all-around silicon nanowire p-type metal-oxide-semiconductor field-effect-transistors
Kola, Sekha, Li, Yiming, Thoti, NarasimhuluJournal:
Japanese Journal of Applied Physics
DOI:
10.7567/1347-4065/ab5b7c
Date:
November, 2019
File:
PDF, 928 KB
2019