Next-Generation Ultrahigh-Density 3-D Vertical Resistive...

IEEE Transactions on Electron Devices 2019 / 12 Vol. 66; Iss. 12

Next-Generation Ultrahigh-Density 3-D Vertical Resistive Switching Memory (VRSM)—Part II: Design Guidelines for Device, Array, and Architecture

Jiang, Zizhen, Qin, Shengjun, Li, Haitong, Fujii, Shosuke, Lee, Dongjin, Wong, Simon, Wong, H.-S. Philip
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Volume:
66
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2019.2950595
Date:
December, 2019
File:
PDF, 2.79 MB
2019
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