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Transient global modeling for the pulling process of Czochralski silicon crystal growth. II. Investigation on segregation of oxygen and carbon
Liu, Xin, Harada, Hirofumi, Miyamura, Yoshiji, Han, Xue-feng, Nakano, Satoshi, Nishizawa, Shin-ichi, Kakimoto, KoichiVolume:
532
Journal:
Journal of Crystal Growth
DOI:
10.1016/j.jcrysgro.2019.125404
Date:
February, 2020
File:
PDF, 2.77 MB
2020