Transient global modeling for the pulling process of...

Transient global modeling for the pulling process of Czochralski silicon crystal growth. II. Investigation on segregation of oxygen and carbon

Liu, Xin, Harada, Hirofumi, Miyamura, Yoshiji, Han, Xue-feng, Nakano, Satoshi, Nishizawa, Shin-ichi, Kakimoto, Koichi
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Volume:
532
Journal:
Journal of Crystal Growth
DOI:
10.1016/j.jcrysgro.2019.125404
Date:
February, 2020
File:
PDF, 2.77 MB
2020
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