Source/Drain Patterning FinFETs as Solution for Physical...

IEEE Access 2019 Vol. 7

Source/Drain Patterning FinFETs as Solution for Physical Area Scaling Toward 5-nm Node

Yoon, Jun-Sik, Lee, Seunghwan, Lee, Junjong, Jeong, Jinsu, Yun, Hyeok, Kang, Bohyeon, Baek, Rock-Hyun
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Volume:
7
Year:
2019
Journal:
IEEE Access
DOI:
10.1109/ACCESS.2019.2956503
File:
PDF, 650 KB
2019
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