Fast-switching Tri-Anode Schottky Barrier Diodes for monolithically integrated GaN-on-Si power circuits
Nela, Luca, Kampitsis, Georgios, Ma, Jun, Matioli, ElisonYear:
2019
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2019.2957700
File:
PDF, 1.21 MB
2019