(Invited) GaN-Based Multiple 2DEG Channel...

ECS Transactions 2019 / 07 Vol. 92; Iss. 4

(Invited) GaN-Based Multiple 2DEG Channel BRIDGE (Buried Dual Gate) HEMT Technology for High Power and Linearity

Shinohara, Keisuke, King, Casey, Regan, Eric, Gomez, M P, Bergman, Joshua, Carter, Andrew, Arias, Andrea, Urteaga, Miguel, Brar, Berinder, Page, Ryan, Chaudhuri, Reet, Islam, Moudud, Xing, Huili Grace
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Volume:
92
Journal:
ECS Transactions
DOI:
10.1149/09204.0103ecst
Date:
July, 2019
File:
PDF, 1.45 MB
2019
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