![](/img/cover-not-exists.png)
Effect of C/Si ratio on growth of 4H-SiC epitaxial layers on on-axis and 4° off-axis substrates
Yan, G.G., He, Y.W., Shen, Z.W., Cui, Y.X., Li, J.T., Zhao, W.S., Wang, L., Liu, X.F., Zhang, F., Sun, G.S., Zeng, Y.P.Volume:
531
Journal:
Journal of Crystal Growth
DOI:
10.1016/j.jcrysgro.2019.125362
Date:
February, 2020
File:
PDF, 1.95 MB
2020