Effect of C/Si ratio on growth of 4H-SiC epitaxial layers...

Journal of Crystal Growth 2020 / 02 Vol. 531

Effect of C/Si ratio on growth of 4H-SiC epitaxial layers on on-axis and 4° off-axis substrates

Yan, G.G., He, Y.W., Shen, Z.W., Cui, Y.X., Li, J.T., Zhao, W.S., Wang, L., Liu, X.F., Zhang, F., Sun, G.S., Zeng, Y.P.
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Volume:
531
Journal:
Journal of Crystal Growth
DOI:
10.1016/j.jcrysgro.2019.125362
Date:
February, 2020
File:
PDF, 1.95 MB
2020
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