Facet Evolution of Selectively Grown Epitaxial Si1−Ge Fin...

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Journal of Crystal Growth 2019 / 12

Facet Evolution of Selectively Grown Epitaxial Si1−Ge Fin Layers in Sub-100 nm Trench Arrays

Jang, Hyunchul, Koo, Sangmo, Byeon, Dae-Seop, Choi, Yongjoon, Ko, Dae-Hong
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Journal:
Journal of Crystal Growth
DOI:
10.1016/j.jcrysgro.2019.125429
Date:
December, 2019
File:
PDF, 3.65 MB
2019
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