Breakdown Voltage Enhancement in GaN Channel and AlGaN...

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Chinese Physics B 2019 / 12

Breakdown Voltage Enhancement in GaN Channel and AlGaN Channel HEMTs Using Large Gate Metal Height

Wang, Zhong-Xu, Du, Lin, Liu, Jun-Wei, Wang, Ying, Jiang, Yun, Ji, Si-Wei, Dong, Shi-Wei, Chen, Wei-Wei, Tan, Xiao-Hong, Li, Jin-Long, Li, Xiao-Jun, Zhao, Sheng-Lei, Zhang, Jin-Cheng, Hao, Yue
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Journal:
Chinese Physics B
DOI:
10.1088/1674-1056/ab5fb9
Date:
December, 2019
File:
PDF, 958 KB
2019
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