Extraction of the 4H-SiC/SiO 2...

IEEE Transactions on Electron Devices 2020 / 1 Vol. 67; Iss. 1

Extraction of the 4H-SiC/SiO 2 Barrier Height Over Temperature

Avino-Salvado, O., Asllani, B., Buttay, C., Raynaud, C., Morel, H.
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Volume:
67
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2019.2955181
Date:
January, 2020
File:
PDF, 844 KB
2020
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