Channeled Implantations of p-Type Dopants into 4H-SiC at...

Materials Science Forum 2019 / 7 Vol. 963

Channeled Implantations of p-Type Dopants into 4H-SiC at Different Temperatures

Linnarsson, Margareta K., Hallén, Anders, Vines, Lasse, Svensson, Bengt G.
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Volume:
963
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.963.382
Date:
July, 2019
File:
PDF, 742 KB
2019
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