![](/img/cover-not-exists.png)
Control of 4H polytype of SiC crystals by moving up the crucible to adjust the temperature field of the growth interface
Gao, Pan, Xin, Jun, Liu, Xuechao, Zheng, Yanqing, Shi, ErweiVolume:
21
Year:
2019
Journal:
CrystEngComm
DOI:
10.1039/c9ce01363f
File:
PDF, 1.84 MB
2019