Control of 4H polytype of SiC crystals by moving up the...

Control of 4H polytype of SiC crystals by moving up the crucible to adjust the temperature field of the growth interface

Gao, Pan, Xin, Jun, Liu, Xuechao, Zheng, Yanqing, Shi, Erwei
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Volume:
21
Year:
2019
Journal:
CrystEngComm
DOI:
10.1039/c9ce01363f
File:
PDF, 1.84 MB
2019
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