Physical mechanism for the synapse behaviour of WTiO...

Physical Chemistry Chemical Physics 2019 Vol. 21; Iss. 42

Physical mechanism for the synapse behaviour of WTiO x -based memristors

Zhang, Hengjie, Cheng, Chuantong, Zhang, Huan, Chen, Run, Huang, Beiju, Chen, Hongda, Pei, Weihua
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Volume:
21
Year:
2019
Journal:
Physical Chemistry Chemical Physics
DOI:
10.1039/c9cp05060d
File:
PDF, 3.49 MB
2019
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