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Improved switching characteristics of p-type tin monoxide field-effect transistors through Schottky energy barrier engineering
Kim, Taikyu, Kim, Jeong-Kyu, Yoo, Baekeun, Xu, Hongwei, Yim, Sungyeon, Kim, Seung-Hwan, Yu, Hyun-Yong, Jeong, Jae KyeongVolume:
8
Year:
2020
Journal:
Journal of Materials Chemistry C
DOI:
10.1039/C9TC04345D
File:
PDF, 3.60 MB
2020