Demonstration of fully vertical GaN-on-Si Schottky diode

Demonstration of fully vertical GaN-on-Si Schottky diode

Zhang, K., Mase, S., Nakamura, K., Hamada, T., Egawa, T.
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Volume:
53
Journal:
Electronics Letters
DOI:
10.1049/el.2017.3166
Date:
November, 2017
File:
PDF, 201 KB
2017
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