Improved Ferroelectric Switching in Sputtered HfZrOx Device...

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IEEE Electron Device Letters 2019

Improved Ferroelectric Switching in Sputtered HfZrOx Device Enabled by High Pressure Annealing

Woo, Jiyong, Jeon, Sanghun, Goh, Youngin, Im, Solyee, Hwang, Jeong Hyeon, Kim, Yeriaron, Kim, Jeong Hun, Im, Jong-Pil, Yoon, Sung-Min, Moon, Seung Eon
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Year:
2019
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2019.2959802
File:
PDF, 527 KB
2019
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