Investigation of Switching Time in GaN/AlN Resonant...

IEEE Transactions on Electron Devices 2020 / 1 Vol. 67; Iss. 1

Investigation of Switching Time in GaN/AlN Resonant Tunneling Diodes by Experiments and P-SPICE Models

Zhang, W.-D., Growden, T. A., Storm, D. F., Meyer, D. J., Berger, P. R., Brown, E. R.
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Volume:
67
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2019.2955360
Date:
January, 2020
File:
PDF, 1.82 MB
2020
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