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Do Chemical Effects Affect the Accumulation of Structural Damage during the Implantation of Fluorine Ions into GaN?
Titov, A. I., Karabeshkin, K. V., Karaseov, P. A., Struchkov, A. I.Volume:
53
Journal:
Semiconductors
DOI:
10.1134/S1063782619110204
Date:
November, 2019
File:
PDF, 547 KB
2019