Synthesis by Molecular Beam Epitaxy and Properties of InGaN Nanostructures of Branched Morphology on a Silicon Substrate
Reznik, R. R., Kotlyar, K. P., Kryzhanovskaya, N. V., Morozov, S. V., Cirlin, G. E.Volume:
45
Journal:
Technical Physics Letters
DOI:
10.1134/S1063785019110129
Date:
November, 2019
File:
PDF, 431 KB
2019