TCAD Ready Density Gradient Calculation of Channel Charge...

Journal of Computational Electronics 2004 / 10 Vol. 3; Iss. 3-4

TCAD Ready Density Gradient Calculation of Channel Charge for Strained Si/Strained Si1−xGexDual Channel pMOSFETs on (001) Relaxed Si1−yGey

C. D. Nguyen, A. T. Pham, C. Jungemann, B. Meinerzhagen
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
3
Language:
english
Pages:
5
DOI:
10.1007/s10825-004-7043-z
Date:
October, 2004
File:
PDF, 244 KB
english, 2004
Conversion to is in progress
Conversion to is failed