Physical modeling of electron mobility enhancement for...

Journal of Computational Electronics 2007 / 09 Vol. 6; Iss. 1-3

Physical modeling of electron mobility enhancement for arbitrarily strained silicon

Enzo Ungersboeck, Siddhartha Dhar, Gerhard Karlowatz, Hans Kosina, Siegfried Selberherr
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Volume:
6
Language:
english
Pages:
4
DOI:
10.1007/s10825-006-0047-0
Date:
September, 2007
File:
PDF, 241 KB
english, 2007
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