Electron mobility in silicon and germanium inversion...

Electron mobility in silicon and germanium inversion layers: The role of remote phonon scattering

Terrance O’Regan, Massimo Fischetti
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Volume:
6
Language:
english
Pages:
4
DOI:
10.1007/s10825-006-0072-z
Date:
September, 2007
File:
PDF, 229 KB
english, 2007
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