Physical modeling of hole mobility in silicon inversion...

Physical modeling of hole mobility in silicon inversion layers under uniaxial stress

Ji Zhao, Yaohua Tan, Jianping Zou, Zhiping Yu
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Volume:
6
Language:
english
Pages:
3
DOI:
10.1007/s10825-006-0075-9
Date:
September, 2007
File:
PDF, 297 KB
english, 2007
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