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Current Conduction and Dielectric Behavior of High k-Y2O3Films Integrated with Si Using Chemical Vapor Deposition as a Gate Dielectric for Metal-Oxide-Semiconductor Devices
A. C. Rastogi, S. B. DesuVolume:
13
Language:
english
Pages:
7
DOI:
10.1007/s10832-004-5087-x
Date:
July, 2004
File:
PDF, 122 KB
english, 2004