Comparison of Ranges for Al Implantations into 4H-SiC...

Materials Science Forum 2019 / 7 Vol. 963

Comparison of Ranges for Al Implantations into 4H-SiC (0001) Using Channeled Ions and an Ion Energy in the Bethe-Bloch Region

Mochizuki, Kazuhiro, Kosugi, Ryoji, Yonezawa, Yoshiyuki, Okumura, Hajime
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Volume:
963
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/msf.963.394
Date:
July, 2019
File:
PDF, 391 KB
2019
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