Argon Bombardment of 4H Silicon Carbide Substrates for...

Materials Science Forum 2019 / 7 Vol. 963

Argon Bombardment of 4H Silicon Carbide Substrates for Tailored Schottky Diode Barrier Heights

Schneider, Michael, Stöber, Laura, Konrath, Jens P., Patocka, Florian, Schmid, Ulrich
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Volume:
963
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/msf.963.506
Date:
July, 2019
File:
PDF, 1.34 MB
2019
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