Impact of Interface Trap Density of SiC-MOSFET in...

Impact of Interface Trap Density of SiC-MOSFET in High-Temperature Environment

Sato, Shintaroh, Masunaga, Masahiro, Mori, Yuki, Sugii, Nobuyuki, Shima, Akio
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Volume:
963
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/msf.963.633
Date:
July, 2019
File:
PDF, 1.13 MB
2019
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