Dependence of the Carrier Removal Rate in 4H-SiC PN Structures on the Irradiation Temperature
Lebedev, Alexander A., Davydovskaya, Klavdya S., Kozlovski, Vitalii V., Korolkov, Oleg, Sleptsuk, Natalja, Toompuu, JanaVolume:
963
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/msf.963.730
Date:
July, 2019
File:
PDF, 1.46 MB
2019