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1200 V SiC MOSFETs with Stable VTH under High Temperature Gate Bias Stress
Franchi, Jimmy, Domeij, Martin, Lee, Kwang WonVolume:
963
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/msf.963.753
Date:
July, 2019
File:
PDF, 439 KB
2019