Avalanche Ruggedness Characterization of 10 kV 4H-SiC...

Materials Science Forum 2019 / 7 Vol. 963

Avalanche Ruggedness Characterization of 10 kV 4H-SiC MOSFETs

Kumar, Ashish, Parashar, Sanket, van Brunt, Edward, Sabri, Shadi, Ganguly, Satyaki, Bhattacharya, Subhashish, Veliadis, Victor
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Volume:
963
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/msf.963.773
Date:
July, 2019
File:
PDF, 1.85 MB
2019
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