Evaluation of Basal Plane Dislocation Behavior in the...

Materials Science Forum 2019 / 7 Vol. 963

Evaluation of Basal Plane Dislocation Behavior in the Epitaxial Layer on a 4H-SiС Wafer Fabricated by the Solution Growth Method

Seki, Kazuaki, Kusunoki, Kazuhiko, Harada, Shinsuke, Ujihara, Toru
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Volume:
963
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/msf.963.80
Date:
July, 2019
File:
PDF, 1.36 MB
2019
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