Simulation of doping levels and deep levels in InGaN-based single-junction solar cell
Shuo Lin, Shengwei Zeng, Xiaomei Cai, Jiangyong Zhang, Shaoxiong Wu, Li Sun, Baoping ZhangVolume:
47
Language:
english
Pages:
9
DOI:
10.1007/s10853-012-6321-6
Date:
June, 2012
File:
PDF, 485 KB
english, 2012