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GaN reactive ion etching using SiCl4:Ar:SF6chemistry
E. Sillero, F. Calle, M. A. Sánchez-GarcíaVolume:
16
Language:
english
Pages:
5
DOI:
10.1007/s10854-005-2306-4
Date:
July, 2005
File:
PDF, 840 KB
english, 2005