Effects of gate sidewall recess on Al0.2Ga0.8As/ In0.15Ga0.85As PHEMTs by citric-based selective etchant
K. F. Yarn, C. I. Liao, Y. H. Wang, M. P. HoungVolume:
16
Language:
english
Pages:
4
DOI:
10.1007/s10854-005-2728-z
Date:
August, 2005
File:
PDF, 718 KB
english, 2005