Comparative studies of defect production in heavily doped...

Journal of Materials Science: Materials in Electronics 2007 / 07 Vol. 18; Iss. 7

Comparative studies of defect production in heavily doped silicon under fast electron irradiation at different temperatures

V. V. Emtsev, P. Ehrhart, D. S. Poloskin, K. V. Emtsev
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Volume:
18
Language:
english
Pages:
4
DOI:
10.1007/s10854-006-9103-6
Date:
July, 2007
File:
PDF, 163 KB
english, 2007
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