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[IEEE 2019 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) - Genting Highland, Pahang, Malaysia (2019.8.21-2019.8.23)] 2019 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) - Inverse Class-F RF Power Amplifier Design Using 10W GaN HEMT
Fauzi, Amirah, Yusoff, Zubaida, Sadeque, Md. GolamYear:
2019
DOI:
10.1109/RSM46715.2019.8943507
File:
PDF, 553 KB
2019