Investigation of deep levels in InGaAs channels comprising...

Journal of Materials Science: Materials in Electronics 2008 / 09 Vol. 19; Iss. 8-9

Investigation of deep levels in InGaAs channels comprising thin layers of InAs

J. Dobbert, Vas. P. Kunets, T. Al. Morgan, D. Guzun, Yu. I. Mazur, W. T. Masselink, G. J. Salamo
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Volume:
19
Language:
english
Pages:
4
DOI:
10.1007/s10854-007-9451-x
Date:
September, 2008
File:
PDF, 413 KB
english, 2008
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