Molecular beam epitaxy of semipolar AlN((11ar{2}2)) and...

Journal of Materials Science: Materials in Electronics 2008 / 09 Vol. 19; Iss. 8-9

Molecular beam epitaxy of semipolar AlN((11ar{2}2)) and GaN((11ar{2}2)) onm-sapphire

Lise Lahourcade, Edith Bellet-Amalric, Eva Monroy, Marie Pierre Chauvat, Pierre Ruterana
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Volume:
19
Language:
english
Pages:
5
DOI:
10.1007/s10854-007-9453-8
Date:
September, 2008
File:
PDF, 420 KB
english, 2008
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