Study of the thermal step signal of GaN grown on porous...

Journal of Materials Science: Materials in Electronics 2008 / 12 Vol. 19; Iss. 12

Study of the thermal step signal of GaN grown on porous silicon substrate by MOVPE

M. S. Bergaoui, T. Boufaden, S. Guermazi, S. Agnel, A. Toureille, B. El Jani
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Volume:
19
Language:
english
Pages:
4
DOI:
10.1007/s10854-007-9504-1
Date:
December, 2008
File:
PDF, 377 KB
english, 2008
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