Numerical analysis of Double Gate and Gate All Around...

Journal of Materials Science: Materials in Electronics 2008 / 12 Vol. 19; Iss. 1 Suppleme

Numerical analysis of Double Gate and Gate All Around MOSFETs with bulk trap states

M. A. Abdi, F. Djeffal, D. Arar, M. L. Hafiane
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Volume:
19
Language:
english
Pages:
6
DOI:
10.1007/s10854-007-9531-y
Date:
December, 2008
File:
PDF, 414 KB
english, 2008
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