Irradiation effects on AlGaN HFET devices and GaN layers

Journal of Materials Science: Materials in Electronics 2008 / 12 Vol. 19; Iss. 1 Suppleme

Irradiation effects on AlGaN HFET devices and GaN layers

Sonia Gnanapragasam, Eberhard Richter, Frank Brunner, Andrea Denker, Richard Lossy, Michael Mai, Friedrich Lenk, Jörg Opitz-Coutureau, Gerhard Pensl, Jens Schmidt, Ute Zeimer, Liun Wang, Baskar Krishn
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Volume:
19
Language:
english
Pages:
4
DOI:
10.1007/s10854-008-9589-1
Date:
December, 2008
File:
PDF, 333 KB
english, 2008
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