Characterization of strained Si wafers by X-ray diffraction...

Journal of Materials Science: Materials in Electronics 2008 / 12 Vol. 19; Iss. 1 Suppleme

Characterization of strained Si wafers by X-ray diffraction techniques

Takayoshi Shimura, Kohta Kawamura, Masahiro Asakawa, Heiji Watanabe, Kiyoshi Yasutake, Atsushi Ogura, Kazunori Fukuda, Osami Sakata, Shigeru Kimura, Hiroki Edo, Satoshi Iida, Masataka Umeno
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Volume:
19
Language:
english
Pages:
5
DOI:
10.1007/s10854-008-9641-1
Date:
December, 2008
File:
PDF, 503 KB
english, 2008
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