Vacancy-Type Defects in GaN for Power Devices Probed by...

Defect and Diffusion Forum 2017 / 3 Vol. 373

Vacancy-Type Defects in GaN for Power Devices Probed by Positron Annihilation

Uedono, Akira, Ishibashi, Shoji, Oshima, Nagayasu, Suzuki, Ryoichi
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Volume:
373
Journal:
Defect and Diffusion Forum
DOI:
10.4028/www.scientific.net/ddf.373.183
Date:
March, 2017
File:
PDF, 316 KB
2017
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