Impact of high mobility III‐V compound material of a short...

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Engineering Reports 2019 / 12

Impact of high mobility III‐V compound material of a short channel thin‐film SiGe double gate junctionless MOSFET as a source

Rout, Soumendra P., Dutta, Pradipta
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Journal:
Engineering Reports
DOI:
10.1002/eng2.12086
Date:
December, 2019
File:
PDF, 3.94 MB
2019
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