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Journal of Electronic Materials 2020 / 1

A Physics-Based Compact Static and Dynamic Characteristics Model for Al2O3/InxAl1−xN/AlN/GaN MOS-HEMTs

Beloufa, Abbes, Bouguenna, Driss, Kermas, Nawel, As, Donat Josef
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Journal:
Journal of Electronic Materials
DOI:
10.1007/s11664-019-07927-8
Date:
January, 2020
File:
PDF, 1.54 MB
2020
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