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Fabrication of a 1.5-inch freestanding GaN substrate by selective dissolution of sapphire using Li after the Na-flux growth
Yamada, Takumi, Imanishi, Masayuki, Murakami, Kosuke, Nakamura, Kosuke, Yoshimura, Masashi, Mori, YusukeJournal:
Journal of Crystal Growth
DOI:
10.1016/j.jcrysgro.2019.125462
Date:
December, 2019
File:
PDF, 3.33 MB
2019