Fabrication of a 1.5-inch freestanding GaN substrate by...

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Journal of Crystal Growth 2019 / 12

Fabrication of a 1.5-inch freestanding GaN substrate by selective dissolution of sapphire using Li after the Na-flux growth

Yamada, Takumi, Imanishi, Masayuki, Murakami, Kosuke, Nakamura, Kosuke, Yoshimura, Masashi, Mori, Yusuke
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Journal:
Journal of Crystal Growth
DOI:
10.1016/j.jcrysgro.2019.125462
Date:
December, 2019
File:
PDF, 3.33 MB
2019
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